3 300 V SiC MOSFET栅氧可靠性研究

陈宏,白云,陈喜明,李诚瞻

Investigation on the Reliability of Gate Oxide in 3 300 V SiC MOSFET

CHEN Hong, BAI Yun, CHEN Ximing and LI Chengzhan

电源学报 . 2020, (4): 10 -14 . DOI: 10.13234/j.issn.2095-2805.2020.4.10