SiC MOSFET与Si IGBT器件温度敏感电参数对比研究

俞恒裕,王俊,江希,陈建军

Comparative Study on Temperature-sensitive Electrical Parameters of SiC MOSFET and Si IGBT

YU Hengyu, WANG Jun, JIANG Xi and CHEN Jianjun

电源学报 . 2020, (4): 28 -37 . DOI: 10.13234/j.issn.2095-2805.2020.4.28