选择区域外延槽栅结构GaN常关型MOSFET的研究

杨帆,何亮,郑越,沈震,刘扬

Research on GaN Based Trench Gate Normally-off MOSFET Using Selective Area Growth Technique

YANG Fan,HE Liang,ZHENG Yue,SHEN Zhen and LIU Yang

电源学报 . 2016, (4): 14 -20 . DOI: 10.13234/j.issn.2095-2805.2016.4.14