1200 V碳化硅MOSFET与硅IGBT器件特性对比性研究

李磊,宁圃奇,温旭辉,张栋

Comparative Performance Study of 1 200 V SiC MOSFET and Si IGBT

LI Lei,NING Puqi,WEN Xuhui and ZHANG Dong

电源学报 . 2016, (4): 32 -38,58 . DOI: 10.13234/j.issn.2095-2805.2016.4.32