考虑变温度影响的SiC MOSFET建模与分析
李辉,钟懿,黄樟坚,廖兴林,谢翔杰,肖洪伟
Modeling and Analysis of SiC MOSFET Considering Variable-temperature Effect
LI Hui, ZHONG Yi, HUANG Zhangjian, LIAO Xinglin, XIE Xiangjie and XIAO Hongwei
电源学报
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2019, (4): 185
-192
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DOI: 10.13234/j.issn.2095-2805.2019.4.185
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