Junction Temperature Monitoring Method for SiC MOSFET Based on Turn-on Transient Drain-source Voltage

DONG Huifen, LI Chan, CHEN Zhoushuai, LIU Songming

PDF(9529 KB)
PDF(9529 KB)
Journal of Power Supply ›› 2026, Vol. 24 ›› Issue (8) : 14-23. DOI: 10.13234/j.issn.2095-2805.2026.8.14
Power Semiconductor Devices and Drive Circuits

Junction Temperature Monitoring Method for SiC MOSFET Based on Turn-on Transient Drain-source Voltage

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2026, 24(8): 14-23 https://doi.org/10.13234/j.issn.2095-2805.2026.8.14

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(9529 KB)

Accesses

Citation

Detail
Sections
Recommended
津公网安备12010402000979号　
津ICP备11001756号-5
Copyright © Journal of Power Supply, All Rights Reserved.
Address：16th Floor, Datong Building, No.467 Huanghe Road, Nankai District, Tianjin, China　
Post Code：300110
Tel: 022-27686327　
Fax: 022-27687886　E-mail: jops@cpss.org.cn
Powered by Beijing Magtech Co. Ltd.

/

〈 〉