An RCD Circuit Design to Suppress Gate Peak Voltage of GaN HEMT

An RCD Circuit Design to Suppress Gate Peak Voltage of GaN HEMT

CHEN Feiyu, Student Member, CPSS, QIN Shiqing, QIAN Leyang, LI Qianru, WANG Boxiang, YANG Guofeng

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Journal of Power Supply ›› 2026, Vol. 24 ›› Issue (7) : 29-38. DOI: 10.13234/j.issn.2095-2805.2026.7.29

Power Semiconductor Devices and Drive Circuits

An RCD Circuit Design to Suppress Gate Peak Voltage of GaN HEMT

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2026, 24(7): 29-38 https://doi.org/10.13234/j.issn.2095-2805.2026.7.29

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