Research on Gate Failure and Aging Characteristics of Solid-state Circuit Breaker Based on SiC MOSFET

Research on Gate Failure and Aging Characteristics of Solid-state Circuit Breaker Based on SiC MOSFET

GUI Lei, PANG Shibao, WANG Yong

PDF(6565 KB)

PDF(6565 KB)

Journal of Power Supply ›› 2025, Vol. 23 ›› Issue (4) : 316-321. DOI: 10.13234/j.issn.2095-2805.2025.4.316

Power Semiconductor Devices

Research on Gate Failure and Aging Characteristics of Solid-state Circuit Breaker Based on SiC MOSFET

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2025, 23(4): 316-321 https://doi.org/10.13234/j.issn.2095-2805.2025.4.316

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(6565 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉