Loss Calculation Method for SiC MOSFET in Three-phase Full-bridge Considering Parasitic Capacitance and Parasitic Inductance

CHEN Kuihao, Student Member, CPSS, LIU Xu

PDF(2912 KB)
PDF(2912 KB)
Journal of Power Supply ›› 2025, Vol. 23 ›› Issue (4) : 295-305. DOI: 10.13234/j.issn.2095-2805.2025.4.295
Power Semiconductor Devices

Loss Calculation Method for SiC MOSFET in Three-phase Full-bridge Considering Parasitic Capacitance and Parasitic Inductance

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2025, 23(4): 295-305 https://doi.org/10.13234/j.issn.2095-2805.2025.4.295

References

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(2912 KB)

Accesses

Citation

Detail

Sections
Recommended

/