Active Gate Control Technology for Improving Switching Overshoots of IGBTs

Active Gate Control Technology for Improving Switching Overshoots of IGBTs

XIE Haichao, WANG Xuemei

PDF(40021 KB)

PDF(40021 KB)

Journal of Power Supply ›› 2024, Vol. 22 ›› Issue (4) : 280-291. DOI: 10.13234/j.issn.2095-2805.2024.4.280

Power Semiconductor Devices

Active Gate Control Technology for Improving Switching Overshoots of IGBTs

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2024, 22(4): 280-291 https://doi.org/10.13234/j.issn.2095-2805.2024.4.280

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(40021 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉