Evaluation Method for Maximum Current Conduction Capability of SiC MOSFET Device at High Temperature

Evaluation Method for Maximum Current Conduction Capability of SiC MOSFET Device at High Temperature

LI Huakang, NING Puqi, KANG Yuhui, CAO Han, ZHENG Dan

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Journal of Power Supply ›› 2024, Vol. 22 ›› Issue (2) : 386-395. DOI: 10.13234/j.issn.2095-2805.2024.2.386

Power Semiconductor Devices

Evaluation Method for Maximum Current Conduction Capability of SiC MOSFET Device at High Temperature

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2024, 22(2): 386-395 https://doi.org/10.13234/j.issn.2095-2805.2024.2.386

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