Investigation on Reliability of High-temperature Gate Oxide in SiC MOSFET

Investigation on Reliability of High-temperature Gate Oxide in SiC MOSFET

LIU Jianjun, CHEN Hong, DING Jieqin, BAI Yun, HAO Jilong, HAN Zhonglin

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Journal of Power Supply ›› 2024, Vol. 22 ›› Issue (1) : 147-152. DOI: 10.13234/j.issn.2095-2805.2024.1.147

Power Semiconductor Devices

Investigation on Reliability of High-temperature Gate Oxide in SiC MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2024, 22(1): 147-152 https://doi.org/10.13234/j.issn.2095-2805.2024.1.147

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