Study on Junction Temperature Monitoring of SiC MOSFET Module

Study on Junction Temperature Monitoring of SiC MOSFET Module

LI Lingyun, HE Qinqin and HUANG Delei

PDF(999 KB)

PDF(999 KB)

Journal of Power Supply ›› 2021, Vol. 19 ›› Issue (3) : 169-174. DOI: 10.13234/j.issn.2095-2805.2021.3.169

SiC， GaN Device, New Power Device and Its Applications

Study on Junction Temperature Monitoring of SiC MOSFET Module

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2021, 19(3): 169-174 https://doi.org/10.13234/j.issn.2095-2805.2021.3.169

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(999 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉