Study on Junction Temperature Extraction of High-power IGBT Module

Study on Junction Temperature Extraction of High-power IGBT Module

GU Mingyue and LIU Jinlu

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Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (6) : 192-198. DOI: 10.13234/j.issn.2095-2805.2020.6.192

SiC， GaN Device, New Power Device and Its Applications

Study on Junction Temperature Extraction of High-power IGBT Module

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(6): 192-198 https://doi.org/10.13234/j.issn.2095-2805.2020.6.192

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