Research on Junction Temperature Monitoring Method for IGBT Power Module Based on On-state Voltage Drop at High Current

Research on Junction Temperature Monitoring Method for IGBT Power Module Based on On-state Voltage Drop at High Current

CHAI Xiaoguang, NING Puqi, CAO Han and WEN Xuhui

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Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (4) : 77-84. DOI: 10.13234/j.issn.2095-2805.2020.4.77

SiC， GaN Device, New Power Device and Its Applications

Research on Junction Temperature Monitoring Method for IGBT Power Module Based on On-state Voltage Drop at High Current

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(4): 77-84 https://doi.org/10.13234/j.issn.2095-2805.2020.4.77

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