Investigation on Design of SiC Planar Gate MOSFET

Investigation on Design of SiC Planar Gate MOSFET

HAN Zhonglin, BAI Yun, CHEN Hong and YANG Chengyue

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Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (4) : 4-9. DOI: 10.13234/j.issn.2095-2805.2020.4.4

SiC， GaN Device, New Power Device and Its Applications

Investigation on Design of SiC Planar Gate MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(4): 4-9 https://doi.org/10.13234/j.issn.2095-2805.2020.4.4

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