Comparative Study on Temperature-sensitive Electrical Parameters of SiC MOSFET and Si IGBT

Comparative Study on Temperature-sensitive Electrical Parameters of SiC MOSFET and Si IGBT

YU Hengyu, WANG Jun, JIANG Xi and CHEN Jianjun

PDF(1330 KB)

PDF(1330 KB)

Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (4) : 28-37. DOI: 10.13234/j.issn.2095-2805.2020.4.28

SiC， GaN Device, New Power Device and Its Applications

Comparative Study on Temperature-sensitive Electrical Parameters of SiC MOSFET and Si IGBT

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(4): 28-37 https://doi.org/10.13234/j.issn.2095-2805.2020.4.28

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(1330 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉