Improvement in Structure of Semiconductor GaN Power Switching Device

Improvement in Structure of Semiconductor GaN Power Switching Device

YANG Yuanyuan

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Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (4) : 186-192. DOI: 10.13234/j.issn.2095-2805.2020.4.186

SiC， GaN Device, New Power Device and Its Applications

Improvement in Structure of Semiconductor GaN Power Switching Device

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(4): 186-192 https://doi.org/10.13234/j.issn.2095-2805.2020.4.186

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