Simulation Analysis and Comparison of Dual Active Bridge Efficiency Based on SiC and Si MOSFET

Simulation Analysis and Comparison of Dual Active Bridge Efficiency Based on SiC and Si MOSFET

LIU Changhe and WANG Xueyuan

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Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (4) : 109-115. DOI: 10.13234/j.issn.2095-2805.2020.4.109

SiC， GaN Device, New Power Device and Its Applications

Simulation Analysis and Comparison of Dual Active Bridge Efficiency Based on SiC and Si MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(4): 109-115 https://doi.org/10.13234/j.issn.2095-2805.2020.4.109

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