Investigation on the Reliability of Gate Oxide in 3 300 V SiC MOSFET

Investigation on the Reliability of Gate Oxide in 3 300 V SiC MOSFET

CHEN Hong, BAI Yun, CHEN Ximing and LI Chengzhan

PDF(1087 KB)

PDF(1087 KB)

Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (4) : 10-14. DOI: 10.13234/j.issn.2095-2805.2020.4.10

SiC， GaN Device, New Power Device and Its Applications

Investigation on the Reliability of Gate Oxide in 3 300 V SiC MOSFET

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(4): 10-14 https://doi.org/10.13234/j.issn.2095-2805.2020.4.10

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(1087 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉