Effects of Chips Layout of Press Pack IEGT on Its Temperature Rise

Effects of Chips Layout of Press Pack IEGT on Its Temperature Rise

XIAO Leishi, DAI Siyang, ZHAO Yao and WANG Zhiqiang

PDF(1195 KB)

PDF(1195 KB)

Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (1) : 68-73. DOI: 10.13234/j.issn.2095-2805.2020.1.68

SiC， GaN Device, New Power Device and Its Applications

Effects of Chips Layout of Press Pack IEGT on Its Temperature Rise

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(1): 68-73 https://doi.org/10.13234/j.issn.2095-2805.2020.1.68

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(1195 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉