Research on IGBT Module Switching Characteristics Test and Selection Method for Driving Parameters

LI Yonghao and CHEN Min

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Journal of Power Supply ›› 2020, Vol. 18 ›› Issue (1) : 162-167. DOI: 10.13234/j.issn.2095-2805.2020.1.162
SiC, GaN Device, New Power Device and Its Applications

Research on IGBT Module Switching Characteristics Test and Selection Method for Driving Parameters

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2020, 18(1): 162-167 https://doi.org/10.13234/j.issn.2095-2805.2020.1.162

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