Modeling and Analysis of SiC MOSFET Considering Variable-temperature Effect

Modeling and Analysis of SiC MOSFET Considering Variable-temperature Effect

LI Hui, ZHONG Yi, HUANG Zhangjian, LIAO Xinglin, XIE Xiangjie and XIAO Hongwei

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Journal of Power Supply ›› 2019, Vol. 17 ›› Issue (4) : 185-192. DOI: 10.13234/j.issn.2095-2805.2019.4.185

SiC， GaN Device, New Power Device and Its Applications

Modeling and Analysis of SiC MOSFET Considering Variable-temperature Effect

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2019, 17(4): 185-192 https://doi.org/10.13234/j.issn.2095-2805.2019.4.185

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