High-performance eGaN FET-based Bus Converters for 48 V Power Architecture

High-performance eGaN FET-based Bus Converters for 48 V Power Architecture

Jianjing WANG, Suvankar BISWAS, Mohamed H. AHMED and Michael DE ROOIJ

PDF(1222 KB)

PDF(1222 KB)

Journal of Power Supply ›› 2019, Vol. 17 ›› Issue (3) : 91-102. DOI: 10.13234/j.issn.2095-2805.2019.3.91

SiC， GaN Device, New Power Device and Its Applications

High-performance eGaN FET-based Bus Converters for 48 V Power Architecture

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2019, 17(3): 91-102 https://doi.org/10.13234/j.issn.2095-2805.2019.3.91

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(1222 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉