Optimal Design and Loss Analysis of Half-bridge LLC Converter Based on GaN HEMT

YAO Shengnong, HAN Jingang, LI Xiaguang, FAN Hui and TANG Tianhao

PDF(1261 KB)
PDF(1261 KB)
Journal of Power Supply ›› 2019, Vol. 17 ›› Issue (3) : 83-90. DOI: 10.13234/j.issn.2095-2805.2019.3.83
SiC, GaN Device, New Power Device and Its Applications

Optimal Design and Loss Analysis of Half-bridge LLC Converter Based on GaN HEMT

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2019, 17(3): 83-90 https://doi.org/10.13234/j.issn.2095-2805.2019.3.83

References

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(1261 KB)

Accesses

Citation

Detail

Sections
Recommended

/