Design of Gate Drive Scheme for 600 V Depletion-mode GaN Power Devices

Design of Gate Drive Scheme for 600 V Depletion-mode GaN Power Devices

PAN Su, HU Li, FENG Xudong, ZHANG Chunqi, MING Xin and ZHANG Bo

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Journal of Power Supply ›› 2019, Vol. 17 ›› Issue (3) : 57-63. DOI: 10.13234/j.issn.2095-2805.2019.3.57

SiC， GaN Device, New Power Device and Its Applications

Design of Gate Drive Scheme for 600 V Depletion-mode GaN Power Devices

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2019, 17(3): 57-63 https://doi.org/10.13234/j.issn.2095-2805.2019.3.57

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