Monolithic Integration of GaN HEMT Power Electronic Devices and Digital Circuit Based on p-GaN Structure

Monolithic Integration of GaN HEMT Power Electronic Devices and Digital Circuit Based on p-GaN Structure

NI Jinyu, KONG Cen, ZHOU Jianjun and KONG Yuechan

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Journal of Power Supply ›› 2019, Vol. 17 ›› Issue (3) : 53-56. DOI: 10.13234/j.issn.2095-2805.2019.3.53

SiC， GaN Device, New Power Device and Its Applications

Monolithic Integration of GaN HEMT Power Electronic Devices and Digital Circuit Based on p-GaN Structure

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2019, 17(3): 53-56 https://doi.org/10.13234/j.issn.2095-2805.2019.3.53

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