Recent Progress in Research on AlGaN/GaN Heterojunction Schottky Barrier Diodes

Recent Progress in Research on AlGaN/GaN Heterojunction Schottky Barrier Diodes

KANG Xuanwu, ZHENG Yingkui, WANG Xinhua, HUANG Sen, WEI Ke, WU Hao, SUN Yue, ZHAO Zhibo and LIU Xinyu

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Journal of Power Supply ›› 2019, Vol. 17 ›› Issue (3) : 44-52. DOI: 10.13234/j.issn.2095-2805.2019.3.44

SiC， GaN Device, New Power Device and Its Applications

Recent Progress in Research on AlGaN/GaN Heterojunction Schottky Barrier Diodes

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2019, 17(3): 44-52 https://doi.org/10.13234/j.issn.2095-2805.2019.3.44

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