Improvement of Junction Temperature of Power Devices by Applying None Zero Vector SVM to Constant Power Area

WANG Xubin, WANG Xuemei and ZHANG Bo

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Journal of Power Supply ›› 2018, Vol. 16 ›› Issue (5) : 67-75. DOI: 10.13234/j.issn.2095-2805.2018.5.67
SiC, GaN Device, New Power Device and Its Applications

Improvement of Junction Temperature of Power Devices by Applying None Zero Vector SVM to Constant Power Area

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2018, 16(5): 67-75 https://doi.org/10.13234/j.issn.2095-2805.2018.5.67

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