Analysis and Design of High Frequency Half-bridge Resonant Converter Based on GaN FETs

Analysis and Design of High Frequency Half-bridge Resonant Converter Based on GaN FETs

GUAN Yueshi,BIAN Qing,LIU Bin,WANG Yijie,ZHANG Xiangjun,XU Dianguo and WANG Wei

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Journal of Power Supply ›› 2016, Vol. 14 ›› Issue (4) : 82-89. DOI: 10.13234/j.issn.2095-2805.2016.4.82

SiC， GaN Device, New Power Device and Its Applications

Analysis and Design of High Frequency Half-bridge Resonant Converter Based on GaN FETs

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2016, 14(4): 82-89 https://doi.org/10.13234/j.issn.2095-2805.2016.4.82

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