Study of Three-phase Bi-directional Inverter Based on New Generation 1 200 V Silicon Carbide (SiC) MOSFET

Study of Three-phase Bi-directional Inverter Based on New Generation 1 200 V Silicon Carbide (SiC) MOSFET

LIU Xuechao(Jimmy),HUANG Jianli and YE Chunxian

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Journal of Power Supply ›› 2016, Vol. 14 ›› Issue (4) : 59-65,81. DOI: 10.13234/j.issn.2095-2805.2016.4.59

SiC， GaN Device, New Power Device and Its Applications

Study of Three-phase Bi-directional Inverter Based on New Generation 1 200 V Silicon Carbide (SiC) MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2016, 14(4): 59-65,81 https://doi.org/10.13234/j.issn.2095-2805.2016.4.59

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