Comparative Performance Study of 1 200 V SiC MOSFET and Si IGBT

Comparative Performance Study of 1 200 V SiC MOSFET and Si IGBT

LI Lei,NING Puqi,WEN Xuhui and ZHANG Dong

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Journal of Power Supply ›› 2016, Vol. 14 ›› Issue (4) : 32-38,58. DOI: 10.13234/j.issn.2095-2805.2016.4.32

SiC， GaN Device, New Power Device and Its Applications

Comparative Performance Study of 1 200 V SiC MOSFET and Si IGBT

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2016, 14(4): 32-38,58 https://doi.org/10.13234/j.issn.2095-2805.2016.4.32

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