Improved Spice Model for Silicon Carbide MOSFETs

Improved Spice Model for Silicon Carbide MOSFETs

LI Yongjie,CHEN Weiwei and ZHOU Yuming

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Journal of Power Supply ›› 2016, Vol. 14 ›› Issue (4) : 28-31. DOI: 10.13234/j.issn.2095-2805.2016.4.28

SiC， GaN Device, New Power Device and Its Applications

Improved Spice Model for Silicon Carbide MOSFETs

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2016, 14(4): 28-31 https://doi.org/10.13234/j.issn.2095-2805.2016.4.28

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