Research on GaN Based Trench Gate Normally-off MOSFET Using Selective Area Growth Technique

Research on GaN Based Trench Gate Normally-off MOSFET Using Selective Area Growth Technique

YANG Fan,HE Liang,ZHENG Yue,SHEN Zhen and LIU Yang

PDF(979 KB)

PDF(979 KB)

Journal of Power Supply ›› 2016, Vol. 14 ›› Issue (4) : 14-20. DOI: 10.13234/j.issn.2095-2805.2016.4.14

SiC， GaN Device, New Power Device and Its Applications

Research on GaN Based Trench Gate Normally-off MOSFET Using Selective Area Growth Technique

{{article.zuoZhe_EN}}

Author information +

History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

Cite this article

Download Citations

{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2016, 14(4): 14-20 https://doi.org/10.13234/j.issn.2095-2805.2016.4.14

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}

{{article.copyrightLicense_en}}

PDF(979 KB)

Accesses

Citation

Detail

Sections

Recommended

/

〈

〉