Impact of Common Source Inductance on Switching Loss of SiC MOSFET

Impact of Common Source Inductance on Switching Loss of SiC MOSFET

DONG Zezheng,WU Xinke,SHENG Kuang and ZHANG Junming

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Journal of Power Supply ›› 2016, Vol. 14 ›› Issue (4) : 112-118. DOI: 10.13234/j.issn.2095-2805.2016.4.112

SiC， GaN Device, New Power Device and Its Applications

Impact of Common Source Inductance on Switching Loss of SiC MOSFET

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{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2016, 14(4): 112-118 https://doi.org/10.13234/j.issn.2095-2805.2016.4.112

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