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A double-sided SiC MOSFET bi-directional power module with flexible buffering spacer
投稿时间:2021-03-11  修订日期:2021-03-22
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DOI:
Keywords:double-sided  bi-directional SiC module  thermo-mechanical stress  Young's modulus  
Fund Project:The National Natural Science Foundation of China (General Program, Key Program, Major Research Plan)
           
AuthorInstitutionEmail
LI Jing Tianjin University meiyunhui@163.com
CAO Junlin 1 Tianjin University 2 Tiangong University
LU Guoquan Virginia Tech gqlu@vt.edu
MEI Yunhui Tiangong University meiyunhui@163.com
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Abstract:
      With the development of power module towards high temperature, high power and high density, these put higher requirements on power packaging. Compared with the traditional wire-bond structure, the double-sided structure has attracted more and more attention due to its high heat dissipation capacity and low parasitic inductance. However, the mismatch of thermal expansion coefficient between the materials makes it suffers tremendous thermo-mechanical stress, thus reducing the reliability of power module. Therefore, in order to develop bi-directional power modules with low thermo-mechanical stress, the effects of chip layouts on the junction temperature, thermo-mechanical stress and the parasitic inductance were analyzed by simulation, and then proposed a flexible buffer with low Young's modulus. The feasibility of reducing thermal mechanical stress and improving the reliability of the module is preliminarily proved by simulation and experiment.
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