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GaN Very-High-Frequency Resonant Flyback Converter
投稿时间:2020-05-13  修订日期:2020-06-28
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Keywords:GaN  very high frequency  high power density  transformer integration
Fund Project:National Natural Science Foundation--Excellent Youth Foundation No.51722702; Fundamental Research Funds for the Central Universities No. NP2019101
                 
AuthorInstitutionEmail
GU zhanbiao The 13th Research Institute, China Electronics Technology Group Corporation gzb96004020@126.com
XU ke Aero Engine Corporation of China xuk@614.aecc
TANG jiacheng tjc325@nuaa.edu.cn
LI zhibin sakura@nuaa.edu.cn
ZHANG zhiliang Areo-Power Sci-tech Center, Nanjing University of Aeronautics and Astronautics zlzhang@nuaa.edu.cn
REN xiaoyong Areo-Power Sci-tech Center, Nanjing University of Aeronautics and Astronautics renxy@nuaa.edu.cn
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Abstract:
      Compared with the Si device under the same voltage rating, the GaN device has a lower on-resistance (Rds(on)) and gate charge (Qg). Thus, the conduction loss and switching loss can be significantly reduced, which is helpful to improve the efficiency and power density. In the low-voltage low-power very-high-frequency (VHF) resonant converter, this paper proposes an air-core transformer integration method to sig-nificantly reduce the PCB area. The design of the complete structure is accomplished with Finite Element Analysis (FEA) to ensure that the unconstrained transformer magnetic field does not affect other components. It is applied to three resonant flyback converters operating at 20 MHz with Si MOSFETs, 30 MHz and 50 MHz with eGaN HEMTs respectively. The 50 MHz eGaN prototype achieves the power density of 39.4 W/in3, which is 41% higher than the 20 MHz Si prototype. Moreover, with the similar efficiency, the overall height of the converters in this paper is less than half of the commercial products.
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