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Three-level Half-Bridge One-Inductor Voltage Balance Circuit Based on SiC Device
投稿时间:2019-08-08  修订日期:2019-11-26
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Keywords:SiC MOSFET device  one-inductor voltage balance  auxiliary converter  three-level half bridge
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AuthorInstitutionEmail
cuihengbin Chengdu Yunda Technology Co., Ltd. cuihb@yunda-tec.com
renhaijun School of Electrical Engineering, Southwest Jiaotong University renhaijun@my.swjtu.edu.cn
zhoutao School of Electrical Engineering, Southwest Jiaotong University zt@my.swjtu.edu.cn
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Abstract:
      Aiming at the problem of magnetic saturation of the transformer caused by the imbalance of the supporting capacitor voltage of the auxiliary converter, one-inductor voltage balance circuit based on SiC MOSFET device is studied. According to analyzing the four working modes of the one-inductor voltage balance circuit, the two power switches are turned on in turn, the redistribution of energy between the two supporting ca-pacitors is realized by the inductor to ensure the balance of the two supporting capacitor voltage. The three typical switch state types of the one-inductor voltage balance circuit are analyzed, and the inductance value of the one-inductor voltage balance circuit is selected according to the switch state type. Simulation and low-power experiments show that the one-inductor voltage balance circuit has a strong voltage balance capa-bility.
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