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High Efficiency High Power Density Series Resonant DC-DC Converter With Low V(BR)DSS MOSFET
Received:January 28, 2019  Revised:March 01, 2019
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Keywords:MHz frequency  series resonant converter  ISOP  ZVS
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AuthorInstitutionEmail
Shi Hongbo Power Electronics, College of Electrical Engineering Zhejiang University shb2012@zju.edu.cn
Wu Xinke Power Electronics, College of Electrical Engineering Zhejiang University wuxinke@zju.edu.cn
Guo Qing Power Electronics, College of Electrical Engineering Zhejiang University guoqing@zju.edu.cn
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Abstract:
      The MHz series resonant converter can easily achieve ZVS on of primary switches in full load range with simple structure and is suitable for high-efficiency and high-power-density isolated DC-DC converter design. However, the state-of-the-art power module usually works at several hundred kHz based on Si MOSFET and the efficiency and power density don’t meet the requirement of on-board integrated power module in sever power supply. In this paper the conduction loss model for primary switches in high frequency resonant converter is built, and the ad-vantage of low V(BR)DSS MOSFET is revealed. A multi-phase input-series output-parallel(ISOP) series resonant DC-DC converter is designed and implemented. The prototype is implemented and the peak efficiency 98.3% is achieved with a power density at 810W/inch3.
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