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Research on the Application of Solid State RF Power Supply Based on GaN Devices
Received:August 31, 2018  Revised:October 13, 2018
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Keywords:RF power supply  GaN power device  Class E  wide band gap
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tanpingping School of Electrical Engineering, University of South China 767653747@qq.com
guichengdong School of Electrical Engineering, University of South China 1634465705@qq.com
jiangliming School of Electrical Engineering, University of South China 1187218481@qq.com
chenwenguang School of Electrical Engineering, University of South China tocwg6666@126.com
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Abstract:
      With the development of power electronics technology, RF power has been developed from the tube power supply to the current transistor RF power supply. Gallium nitride (GaN) is a typical representative of the third generation of wide bandgap semiconductor materials due to its excellent properties such as wide gap, high critical electric field, high electron saturation drift velocity and highly conductive AlGaN/GaN heterojunction two-dimensional electrons gas (2DEG). Compared with silicon (Si) power devices, GaN power devices have lower on-resistance and smaller input and output capacitance. These characteristics make GaN power devices show high switching speed and low loss.Based on the E-type power RF power supply, a 4 MHz, power-adjustable all-solid-state RF power supply experimental prototype was designed and manufactured using GaN power devices. Through the design and optimization of the circuit, the efficiency of the prototype is 96.7% when the output power of the prototype is 21.4 W. And the GaN device on the prototype is replaced by the Si power device that produces the RF power supply. The experimental data verified that the GaN device has a fast switching speed and low loss, which can greatly improve the efficiency of the RF power supply.
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