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Dual Active Bridge Bi-directional DC-DC Proficiency Simulation based on SiC and Si MOSFET
Received:August 03, 2018  Revised:October 17, 2018
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Keywords:dual active bridge  simulation  SiC MOSFET
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Liuchanghe Clean Energy Automotive Engineering Center white9861@163.com
Wangxueyuan white940928@163.com
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Abstract:
      By building a single-tube efficiency simulation model, the advantages of SiC MOSFETs compared to Si MOSFETs are analyzed from the per-spective of power dissipation. Combining with Ansoft Maxwell finite element analysis, an equivalent model of the transformer suitable for effi-ciency simulation under a given operating condition was established. The efficiency simulation was performed based on the dual active bridge bi-directional DC-DC topology, and the efficiency difference was compared under different condition.
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