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Impact of SiC devices on EMC characteristics and efficiency of grid-connected Inverter
Received:February 17, 2018  Revised:March 14, 2018
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Keywords:SiC MOSFET  EMC model  Conducted noise  Efficiency
Fund Project:National Natural Science Foundation of China (51337009)
        
AuthorInstitutionEmail
WU Junxiong Institute of Power Electronics, Zhejiang University 21510077@zju.edu.cn
HE Ning Institute of Power Electronics, Zhejiang University hening722@zju.edu.cn
XU Dehong Institute of Power Electronics, Zhejiang University xdh@cee.zju.edu.cn
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Abstract:
      Plenty of researches about SiC MOSFET grid-connected inverters have been done. Firstly this paper discusses the EMC modeling of grid-connected three phase SiC MOSFET inverter. EMI source caused by SiC MOSFET switching behavior is studied and an equivalent source model is presented. Then the noise transmission circuit is introduced with considering the damping effect of the inverter power loss. Both the theoretical EMC model and simulation EMC model of the SiC MOSFET grid-connected inverter are de-rived. The theoretical EMC model and simulation EMC model are verified with experimental results. Finally, the 10 kW pro-totype of trench SiC inverter, planar SiC inverter and Si IGBT inverter are built. The conducted noise level of the three inverter under the same switching frequency and rated power efficiency with increased switching frequency are compared.
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