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WU Junxiong,HE Ning,XU Dehong.Impact of SiC Devices on EMC Characteristics and Efficiency of Grid-connected Inverter[J].JOURNAL OF POWER SUPPLY,2019,17(1):136-144
Impact of SiC Devices on EMC Characteristics and Efficiency of Grid-connected Inverter
Received:February 17, 2018  Revised:December 24, 2018
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DOI:10.13234/j.issn.2095-2805.2019.1.136
Keywords:SiC MOSFET  EMC model  conducted noise  efficiency
Fund Project:National Natural Science Foundation of China (51337009)
        
AuthorInstitutionEmail
WU Junxiong Institute of Power Electronics, Zhejiang University, Hangzhou , China
HE Ning Institute of Power Electronics, Zhejiang University, Hangzhou , China
XU Dehong Institute of Power Electronics, Zhejiang University, Hangzhou , China xdh@zju.edu.cn
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Abstract:
      In recent years, wide band gap device SiC MOSFET have attracted more and more attention from the field of grid-connected inverter. In this paper, the construction of an EMC model of a grid-connected three-phase SiC MOSFET inverter is discussed at first. Through the analysis of a noise source model, the equivalent substitution is performed. By combining the damping effect of the inverter's power loss on the transmission path of noise, both the simulation and theoretical EMC models of the SiC inverter are derived. Then, experimental results on the inverter platform were compared with those of the simulation and theoretical models, which verified the feasibility of the proposed model. Finally, the conducted interference at the same switching frequency and the rated power efficiency at different switching frequencies were experimentally compared among a trench SiC inverter, a planar SiC inverter, and a Si IGBT inverter.
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