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QIN Haiyang,ZHENG Ziqing,ZHAO Zhenbo,WANG Tianzhen,LI Jiaxu.Applied Research of Current Source Driver in High Power Density IGBT5[J].JOURNAL OF POWER SUPPLY,2018,16(6):159-165
Applied Research of Current Source Driver in High Power Density IGBT5
Received:April 14, 2017  Revised:May 22, 2018
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DOI:10.13234/j.issn.2095-2805.2018.6.159
Keywords:high power density  insulated gate bipolar transistor(IGBT)  current source driver  switching loss
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AuthorInstitutionEmail
QIN Haiyang Logistics Engineering College, Shanghai Maritime University, Shanghai , China Xinghai0608@163.com
ZHENG Ziqing Infineon Technologies China Co., Ltd, Shanghai , China
ZHAO Zhenbo Infineon Technologies China Co., Ltd, Shanghai , China
WANG Tianzhen Logistics Engineering College, Shanghai Maritime University, Shanghai , China
LI Jiaxu State Grid Anshan Electric Power Supply Company, Anshan , China
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Abstract:
      The development of insulated gate bipolar transistor(IGBT) is promoting the development of driver tech-nology. To reduce the turn-on losses of high power density IGBT, optimize the current slew rate di/dt, and improve the power density and energy conversion efficiency of the system, a current source driver was designed using a driver integrated circuit(IC) with a function of slew rate control. A test was conducted on a double-pulse experimental platform, and the results obtained using the novel driver were compared with those using the traditional voltage source driver, which verified that the proposed current source driver had advantages in reducing turn-on losses and optimizing the current slew rate di/dt. The results in this paper provide reference for the research and design of driver circuit.
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