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JIANG Furong,YANG Shu,SHENG Kuang.Comparative Study on Temperature-dependent Characteristic Parameters of SiC MOSFET[J].JOURNAL OF POWER SUPPLY,2018,16(6):143-151
Comparative Study on Temperature-dependent Characteristic Parameters of SiC MOSFET
Received:December 09, 2017  Revised:July 09, 2018
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DOI:10.13234/j.issn.2095-2805.2018.6.143
Keywords:SiC MOSFET  temperature  on-resistance  threshold voltage  mobility  interface state
Fund Project:the National Key Research and Development Program of China (No. 2016YFB0400402) and the National Science Foundation of China (No.51577169)
        
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JIANG Furong College of Electrical Engineering, Zhejiang University, Hangzhou , China
YANG Shu College of Electrical Engineering, Zhejiang University, Hangzhou , China
SHENG Kuang College of Electrical Engineering, Zhejiang University, Hangzhou , China shengk@zju.edu.cn
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Abstract:
      Three generations of SiC MOSFETs fabricated by Cree Inc. were tested at a temperature varying from -160 to 200℃, and the characteristic parameters of each generation, such as threshold voltage and on-resistance, were extracted. In particular, the temperature-dependence of threshold voltage and on-resistance, as well as the impact of gate bias on on-resistance, were analyzed and compared. Through the construction of a physical model, the relationships of threshold voltage and different components of on-resistance vs. temperature were compared for three generations. It was found that threshold voltage shows less temperature dependence along with the upgrade of SiC MOSFET, a plausible reason of which is the lower density of traps at the SiO2/SiC interface. By fitting the transfer characteristics at various temperatures using TCAD simulation, it was verified that the interface state density of the latest generation of SiC MOSFET was reduced, suggesting a significant improvement in SiC MOSFET technology in the past few years.
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