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SiC器件对并网逆变器EMC特性和效率影响的分析
Impact of SiC devices on EMC characteristics and efficiency of grid-connected Inverter
投稿时间:2018-02-17  修订日期:2018-03-14
DOI:
中文关键词:  SiC MOSFET  EMC模型  传导干扰  效率
英文关键词:SiC MOSFET  EMC model  Conducted noise  Efficiency
基金项目:国家自然科学基金(基金编号51337009)
作者单位E-mail
吴俊雄 浙江大学电力电子研究所 21510077@zju.edu.cn 
何宁 浙江大学电力电子研究所 hening722@zju.edu.cn 
徐德鸿 浙江大学电力电子研究所 xdh@cee.zju.edu.cn 
摘要点击次数: 609
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中文摘要:
      近年来,宽禁带器件SiC MOSFET在并网逆变器邻域已经取得了越来越多的关注。本文首先讨论了SiC MOSFET三相并网逆变器EMC模型的建立。通过分析噪声源的模型,进行等效替代,并结合逆变器损耗对于噪声传导路径的阻尼作用,得到了SiC逆变器的EMC仿真模型和理论模型。然后,通过逆变器平台实验的结果与仿真模型和理论模型的结果进行了对比,验证了模型的可行性,最后,通过实验比较了沟道栅SiC逆变器,平面栅SiC逆变器和Si IGBT逆变器三者在相同开关频率下的传导干扰和不同开关频率下的满载效率。
英文摘要:
      Plenty of researches about SiC MOSFET grid-connected inverters have been done. Firstly this paper discusses the EMC modeling of grid-connected three phase SiC MOSFET inverter. EMI source caused by SiC MOSFET switching behavior is studied and an equivalent source model is presented. Then the noise transmission circuit is introduced with considering the damping effect of the inverter power loss. Both the theoretical EMC model and simulation EMC model of the SiC MOSFET grid-connected inverter are de-rived. The theoretical EMC model and simulation EMC model are verified with experimental results. Finally, the 10 kW pro-totype of trench SiC inverter, planar SiC inverter and Si IGBT inverter are built. The conducted noise level of the three inverter under the same switching frequency and rated power efficiency with increased switching frequency are compared.
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