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IGBT模块的新型开关模型与损耗分析
Modeling and Loose Analysis of the New Switching of IGBT Modules
投稿时间:2018-01-07  修订日期:2018-03-30
DOI:
中文关键词:  IGBT  开关暂态模型  开关损耗模型  曲线拟合
英文关键词:IGBT  switching transients model  switching loss model  curve fitting
基金项目:
作者单位E-mail
徐晓贤 中国矿业大学(北京) 517324122@qq.com 
沙广林 中国电力科学研究院有限公司 shaguanglin@epri.sgcc.com.cn 
庄园 中国矿业大学(北京) zhuangy90@126.com 
刘瑨琪 中国矿业大学(北京) 362444529@qq.com 
王聪 中国矿业大学(北京) wangc@cumtb.edu.cn 
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中文摘要:
      为解决IGBT模块开关模型适用性差,拟合度低,开关损耗难以实时连续计算的问题,本文通过分析绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)模块开关过程的动、静态特性,着重考虑器件结温和杂散参数等参考量对IGBT开关过程中的瞬时电压、电流波形的影响,基于曲线拟合理论,建立了IGBT模块的开关模型与损耗模型。所建立的开关模型通用性强,适用于相邻开关周期内开关管导通电流不相等的电路;损耗模型精确度高,能够实时累加计算电路的损耗数值。基于Matlab/Simulink环境对开关过程进行仿真并搭建了双重移相DC-DC实验样机进行验证,仿真与实验结果验证了所提出的开关模型及损耗模型的正确性和准确性。
英文摘要:
      This paper summarizes the dynamic and static characteristics of the power transistor and the anti - parallel diode switching transient process of the insulated gate bipolar transistor (IGBT) module. Adopting the method of curve fitting, fitting the waveforms to accurately according to the parameters like stray inductance and device junction temperature, the corresponding switching transient model and losses model are established. The switch model with high versatility and it established is suitable for the circuit which the conduction current of the switch in the adjacent switching cycle is not equal. The losses model with strong accuracy and it can accumulate the loss value of the calculation circuit in real time. Finally, it simulates the transient process of the switch in Simulink, the correctness of the proposed switch model and losses model are verified by the comparison of simulation and experimental results.
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