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刘扬,杨旭.GaN基功率电子器件及其应用专辑特邀主编述评[J].电源学报,2019,17(3):1-3
GaN基功率电子器件及其应用专辑特邀主编述评
Editorial on the Special Issue of GaN-based Power Electronic Devices and Their Applications
投稿时间:2019-06-11  修订日期:2019-06-11
DOI:10.13234/j.issn.2095-2805.2019.3.1
中文关键词:  氮化镓  功率电子器件  功率密度  通态电阻  开关损耗  主编述评
英文关键词:gallium nitride(GaN)  power electronic device  power density  turn-on resistance  switching loss  editorial
基金项目:
作者单位
刘扬 中山大学电子与信息学院 
杨旭 西安交通大学电气工程学院 
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中文摘要:
      GaN基功率电子器件因其具有开关速度快、开关频率高、工作结温高、通态电阻小、开关损耗低等优势,适合应用于新型高效、大功率等的电力电子系统。国内关于GaN基功率电子器件的研究已经取得了较为明显的进展,但与发达国家相比仍有一定的差距。为此,《电源学报》特别推出了"GaN基功率电子器件及其应用"专辑,基本涵盖GaN功率电子器件及其应用研究的热点问题,展示了不同研究机构和企业在该领域的研发现状,具有良好的学术研究和应用参考价值。
英文摘要:
      Owing to their fast switching speed, high switching frequency, satisfying thermal properties, low turn-on resistance, low switching loss, etc., gallium nitride(GaN)-based power electronic devices can be applied to novel high-efficiency and high-power power electronic systems. In China, there has been substantial progress in is field. However, compared with the studies conducted in developed countries, there still exists certain gap. In this background, Journal of Power Supply publishes a special issue of GaN-based power electronic devices and their applications, covering various hot issues and showing the research and development status of different research institutions and enterprises in this field. As such, this special issue provides reference materials for both academic research and application development.
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