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倪金玉,孔岑,周建军,孔月婵.基于p-GaN结构的GaN HEMT功率电子器件和数字电路单片集成技术[J].电源学报,2019,17(3):53-56
基于p-GaN结构的GaN HEMT功率电子器件和数字电路单片集成技术
Monolithic Integration of GaN HEMT Power Electronic Devices and Digital Circuit Based on p-GaN Structure
投稿时间:2019-03-01  修订日期:2019-05-01
DOI:10.13234/j.issn.2095-2805.2019.3.53
中文关键词:  单片集成  p-GaN帽层  增强型GaN功率电子器件  数字电路
英文关键词:monolithic integration  p-GaN cap  enhancement-mode GaN power electronic device  digital circuit
基金项目:国家重点研发计划资助项目(2017YFB0402802)
作者单位E-mail
倪金玉 微波毫米波单片集成和模块电路重点实验室, 南京 210016  
孔岑 微波毫米波单片集成和模块电路重点实验室, 南京 210016 k.cen@163com 
周建军 微波毫米波单片集成和模块电路重点实验室, 南京 210016  
孔月婵 微波毫米波单片集成和模块电路重点实验室, 南京 210016  
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中文摘要:
      基于含p-GaN帽层的Si基GaN材料,实现了增强型GaN功率电子器件与数字电路单片集成技术的开发。在同一片晶圆上实现了增强型高压GaN器件、DCFL结构反相器和17级环形振荡器。高压GaN功率电子器件阈值电压VTH达到1.2 V,击穿电压VBD达到700 V,输出电流ID达到8 A,导通电阻RON为300 mΩ。基于E/D集成技术的DCFL结构反相器低噪声和高噪声容限分别为0.63 V和0.95 V;所研制17级环形振荡器在输入6 V条件下振荡频率345 MHz,级延时为85 ps。
英文摘要:
      GaN power electronic devices and digital circuits were fabricated on Si-based GaN material with p-GaN cap monolithically. An enhancement-mode GaN power device with high breakdown voltage, a direct-coupled FET logic (DCFL) inverter and a 17-stage ring oscillator were realized on one same wafer. The threshold voltage VTH, breakdown voltage VBD, output current ID and on-resistance RON of the GaN HEMT were 1.2 V, 700 V, 8 A, and 300 mΩ, respectively. The DCFL inverter was realized based on the enhancementand depletion-mode integration technology, and its logic-low and logic-high noise margins were 0.63 V and 0.95 V, respectively. The 17-stage ring oscillator showed an oscillation frequency of 435 MHz and a propagation delay of 85 ps at a supply voltage of 6 V.
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