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严鼎,孙伟锋,祝靖,李冬冬.GaN功率器件预驱动芯片设计与封装集成[J].电源学报,2019,17(3):64-71
GaN功率器件预驱动芯片设计与封装集成
Pre-driver Chip Design and Packaging Integration for GaN Power Devices
投稿时间:2019-02-28  修订日期:2019-05-01
DOI:10.13234/j.issn.2095-2805.2019.3.64
中文关键词:  氮化镓  栅极驱动  功率集成电路  封装集成技术
英文关键词:gallium nitride(GaN)  gate drive  power integrated circuit  packaging integration technology
基金项目:国家自然科学基金资助项目(61874026,61674030,61804026);江苏省自然科学基金资助项目(61504025);国家重点研发计划资助项目(2017YFB0402900)
作者单位E-mail
严鼎 东南大学国家 ASIC 工程技术研究中心, 南京 210096  
孙伟锋 东南大学国家 ASIC 工程技术研究中心, 南京 210096 swffrog@seu.edu.cn 
祝靖 东南大学国家 ASIC 工程技术研究中心, 南京 210096  
李冬冬 东南大学国家 ASIC 工程技术研究中心, 南京 210096  
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中文摘要:
      氮化镓GaN(gallium nitride)功率器件因其出色的导通与开关特性,能够实现系统高频化与小型化,有效提升系统功率密度。但是,增强型GaN功率器件由于其栅极可靠性问题,使其在电源管理系统中无法直接替换传统硅基功率MOSFET器件。为此,提出一种预驱动芯片,通过片内集成LDO与电平移位结构,实现兼容12~15 V输入,并输出5 V信号对GaN功率器件的栅极进行有效与可靠控制,达到兼容传统硅基功率器件应用系统的要求。此外,通过多芯片合封技术,将预驱动芯片与GaN功率器件实现封装集成,降低了寄生电感,使其应用可靠性进一步提升。
英文摘要:
      Owing to their excellent on-state and switching characteristics, gallium nitride(GaN) power devices can meet the high-frequency and miniaturization requirements for electronic power systems, thus effectively improving the systems' power density. However, the enhanced GaN power device cannot directly replace the Si-based power MOSFET device in the power management system because of the reliability problem with its gate. Accordingly, a pre-driver chip for GaN power device integrating the low dropout regulator(LDO) and the level-shift structure is proposed, which is compatible with the 12~15 V input and can output 5 V signal to effectively and reliably control the gate in GaN power devices. In this way, the compatibility requirement for the system with the application of the conventional Si-based power devices is satisfied. In addition, the pre-driver chip and the GaN power device are packaged in one chip using the multichip packaging technology, which reduces the parasitic inductance and further improves the application reliability.
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